Development FD-SOI MOSFET amplifiers for integrated read-out circuit of superconducting-tunnel-junction single-photon-detectors
Kenji Kiuchi, Shinhong Kim, Yuji Takeuchi, Kenichi Takemasa, Kazuki, Nagata, Kota Kasahara, Koya Moriuchi, Ren Senzaki, Shunsuke Yagi, Hirokazu, Ikeda, Shuji Matsuura, Takehiko Wada, Hirokazu Ishino, Atsuko Kibayashi,, Hiromi Sato, Satoru Mima, Takuo Yoshida, Ryuta Hirose

TL;DR
This paper presents a cryogenic read-out circuit for superconducting-tunnel-junction single-photon detectors using FD-SOI MOSFETs, achieving high resolution infrared photon detection with optimized amplification at 370 mK.
Contribution
It introduces a novel FD-SOI MOSFET based charge amplifier design suitable for cryogenic single-photon detection systems, demonstrating feasibility at 370 mK.
Findings
FD-SOI MOSFETs operate effectively at cryogenic temperatures.
The proposed amplifier design meets response and power requirements.
STJs achieve low leak current suitable for high-resolution photon detection.
Abstract
We proposed a new high resolution single photon infrared spectrometer for search for radiative decay of cosmic neutrino background(CB). The superconducting-tunnel-junctions(STJs) are used as a single photoncounting device. Each STJ consists of Nb/Al/AlO/Al/Nb layers and their thicknesses are optimized for the operation temperature at 370 mK cooled by a He sorption refrigerator. Our STJs achieved the leak current 250 pA and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio(S/N). FD-SOI MOSFETs can be operated at cryogenic temperature of 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on…
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Taxonomy
TopicsSuperconducting and THz Device Technology · Physics of Superconductivity and Magnetism · Gyrotron and Vacuum Electronics Research
