TID-Effect Compensation and Sensor-Circuit Cross-Talk Suppression in Double-SOI Devices

TL;DR

This paper demonstrates the effectiveness of double-SOI (DSOI) pixel sensors in compensating for TID effects and suppressing cross-talk, making them suitable for high-energy physics experiments.

Contribution

It presents new results on TID compensation in DSOI pixel sensors up to 100 kGy and evaluates cross-talk suppression, advancing DSOI sensor technology for high-radiation environments.

Findings

Successful TID compensation up to 100 kGy in pixel circuits

Effective cross-talk suppression in DSOI devices

Potential application in high-energy physics experiments

Abstract

We are developing double silicon-on-insulator (DSOI) pixel sensors for various applications such as for high-energy experiments. The performance of DSOI devices has been evaluated including total ionization damage (TID) effect compensation in transistors using a test-element-group (TEG) up to 2 MGy and in integration-type sensors up to 100 kGy. In this article, successful TID compensation in a pixel-ASD-readout-circuit is shown up to 100 kGy for the application of DSOI to counting-type sensors. The cross-talk suppression in DSOI is being evaluated. These results encourage us that DSOI sensors are applicable to future high-energy experiments such as the BELLE-II experiment or the ILC experiment.