Transition from positive to negative magnetoresistance induced by a constriction in semiconductor nanowire

TL;DR

This study investigates how a geometric constriction in an InSb nanowire causes a transition from negative to positive magnetoresistance, influenced by constriction size, transverse states, and spin Zeeman effect.

Contribution

It reveals the critical role of constriction geometry in magnetoresistance sign reversal in semiconductor nanowires, combining experimental observations with theoretical explanations.

Findings

Magnetoresistance switches from negative to positive with increasing constriction radius.

The sign change occurs at a nearly constant constriction radius across magnetic field strengths.

The sign reversal is due to combined effects of transverse states modification and spin Zeeman effect.

Abstract

We have studied the magnetotransport through an indium antimonide (InSb) nanowire grown in [111] direction, with a geometric constriction and in an external magnetic field applied along the nanowire axis. We have found that the magnetoresistance is negative for the narrow constriction, nearly zero for the constriction of some intermediate radius, and takes on positive values for the constriction with the radius approaching that of the nanowire. For all magnitudes of the magnetic field, the radius of constriction at which the change of the magnetoresistance sign takes place has been found to be almost the same as long as other geometric parameters of the nanowire are fixed. The sign reversing of the magnetoresistance is explained as a combined effect of two factors: the influence of the constriction on the transverse states and the spin Zeeman effect.