A first-principles study of carbon-related energy levels in GaN. Part I - complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies
Masahiko Matsubara, Enrico Bellotti

TL;DR
This study uses first-principles calculations to analyze various carbon-related defect complexes in GaN, providing insights into their energy levels and optical properties relevant to experimental trap levels.
Contribution
It offers a comprehensive first-principles analysis of multiple carbon complexes in GaN, linking calculated energy levels to experimental trap observations for the first time.
Findings
Identified physical origins of previously unknown C-related trap levels.
Calculated formation energies and transition levels match experimental data.
Provided optical activation energies for various carbon complexes.
Abstract
Various forms of carbon based complexes in GaN are studied with first-principles calculations employing Heyd-Scuseria-Ernzerhof hybrid functional within the framework of density functional theory. We consider carbon complexes made of the combinations of single impurities, i.e. , and , where , and denote C substituting nitrogen, C substituting gallium and interstitial C, respectively, and of neighboring gallium/nitrogen vacancies (/), i.e. and . Formation energies are computed for all these configurations with different charge states after full geometry optimizations. From our calculated formation energies, thermodynamic transition levels are evaluated, which are related to the thermal activation energies…
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