Maximal adaptive-decision speedups in quantum-state readout
B. D'Anjou, L. Kuret, L. Childress, W. A. Coish

TL;DR
This paper introduces a theoretical framework and experimental validation for adaptive decision rules that significantly reduce the time needed for high-fidelity quantum state readout, with potential for unbounded speedup.
Contribution
It reformulates quantum state readout as a first-passage time problem and establishes maximum achievable speedups for common schemes, also proposing a scheme with theoretically unlimited speedup.
Findings
Maximum speedup bounds of 4 and 2 for two readout schemes.
Experimental demonstration of approximately 2x speedup in NV-center charge state readout.
Proposal of a readout scheme with unbounded potential speedup as fidelity increases.
Abstract
The average time required for high-fidelity readout of quantum states can be significantly reduced via a real-time adaptive decision rule. An adaptive decision rule stops the readout as soon as a desired level of confidence has been achieved, as opposed to setting a fixed readout time . The performance of the adaptive decision is characterized by the "adaptive-decision speedup," . In this work, we reformulate this readout problem in terms of the first-passage time of a particle undergoing stochastic motion. This formalism allows us to theoretically establish the maximum achievable adaptive-decision speedups for several physical two-state readout implementations. We show that for two common readout schemes (the Gaussian latching readout and a readout relying on state-dependent decay), the speedup is bounded by and , respectively, in the limit of high single-shot…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsDiamond and Carbon-based Materials Research · Electronic and Structural Properties of Oxides · Semiconductor materials and devices
