Development of the Pixelated Photon Detector Using Silicon on Insulator Technology for TOF-PET

TL;DR

This paper presents the design of a pixelated linear avalanche photodiode using Silicon on Insulator technology to improve sensitivity and response time for TOF-PET applications, avoiding issues like dark counts and dead time.

Contribution

It introduces a novel SOI-based linear APD design and inspects optimal structures, advancing photon detection technology for medical imaging.

Findings

Designed a test element group (TEG) of linear APD

Inspected optimal structure of linear APD

Demonstrated potential for high-speed, low-noise detection

Abstract

To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional pixelated photo detector is operated at Geiger avalanche multiplication. However higher gain of SPAD seems very attractive, photon detection efficiency per unit area is low. This weak point is mainly caused by Geiger avalanche mechanism. To overcome these difficulties, we designed Pixelated Linear Avalanche Integration Detector using Silicon on Insulator technology (SOI-Plaid). To avoid dark count noise and dead time comes from quench circuit, we are planning to use APD in linear multiplication mode. SOI technology enables laminating readout circuit and APD layer, and high-speed and low-noise signal reading regardless smaller gain of linear APD. This study shows design of linear APD by using SOI fabrication process. We designed test element group (TEG) of linear APD and inspected optimal structure of linear APD.