MOCVD synthesis of compositionally tuned topological insulator nanowires

TL;DR

This paper demonstrates a scalable MOCVD method to synthesize high-quality, compositionally tunable topological insulator nanowires, enabling advanced device applications and research into Majorana Fermions.

Contribution

It introduces a novel MOCVD process for producing compositionally controlled TI nanowires with high quality surfaces and sub-micron dimensions.

Findings

Nanowires with compositions from Bi2Se3 to Bi2Te3

Successful synthesis of Bi2Te2Se nanowires

High-quality nanostructured TI compounds suitable for Majorana Fermion research

Abstract

Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub-micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi-, Se-, and Te-bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi2Se3 to Bi2Te3, including the ternary compound Bi2Te2Se. These high quality nanostructured TI compounds are suitable platforms for on-going searches for Majorana Fermions.