Semiconductor double quantum dot micromaser
Y.-Y. Liu, J. Stehlik, C. Eichler, M. J. Gullans, J. M. Taylor, J. R., Petta

TL;DR
This paper demonstrates a semiconductor double quantum dot maser driven by single electron tunneling, providing insights into quantum coherence and gain mechanisms in the few-emitter regime.
Contribution
It introduces a novel maser using semiconductor double quantum dots as the gain medium, driven by single electron tunneling events.
Findings
Verified maser action through microwave field statistics
Achieved coherent microwave emission from a single-electron device
Enhanced understanding of quantum coherence in semiconductor masers
Abstract
The coherent generation of light, from masers to lasers, relies upon the specific structure of the individual emitters that lead to gain. Devices operating as lasers in the few-emitter limit provide opportunities for understanding quantum coherent phenomena, from THz sources to quantum communication. Here we demonstrate a maser that is driven by single electron tunneling events. Semiconductor double quantum dots (DQDs) serve as a gain medium and are placed inside of a high quality factor microwave cavity. We verify maser action by comparing the statistics of the emitted microwave field above and below the maser threshold.
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Taxonomy
TopicsNanowire Synthesis and Applications · Quantum Dots Synthesis And Properties · Semiconductor Quantum Structures and Devices
