Coherence times of precisely depth controlled NV centers in diamond

TL;DR

This study precisely controlled the depth of NV centers in diamond to analyze how their coherence times vary with proximity to the surface, revealing a critical depth where surface effects significantly reduce coherence.

Contribution

It introduces a method for controlled depth placement of NV centers and systematically studies their coherence time dependence on depth with nanoscale precision.

Findings

Coherence times decline rapidly within the last 22 nm before NV centers disappear.

Identified a critical depth where surface spin bath influences NV coherence.

Enabled creation of shallow NV centers with long coherence times for sensitive external spin detection.

Abstract

We investigated the depth dependence of coherence times of nitrogen-vacancy (NV) centers through precisely depth controlling by a moderately oxidative at 580{\deg}C in air. By successive nanoscale etching, NV centers could be brought close to the diamond surface step by step, which enable us to trace the evolution of the number of NV centers remained in the chip and to study the depth dependence of coherence times of NV centers with the diamond etching. Our results showed that the coherence times of NV centers declined rapidly with the depth reduction in their last about 22 nm before they finally disappeared, revealing a critical depth for the influence of rapid fluctuating surface spin bath. By monitoring the coherence time variation with depth, we could make a shallow NV center with long coherence time for detecting external spins with high sensitivity.