Room temperature write-read operations in antiferromagnetic memory

TL;DR

This paper demonstrates room temperature write-read operations in antiferromagnetic FeRh memory devices using magnetic field and electric current, advancing the development of practical antiferromagnetic memory technology.

Contribution

It introduces a method for sequential write and read operations in FeRh-based antiferromagnetic memory at room temperature, a significant step towards practical applications.

Findings

Successful room temperature write-read operations in FeRh memory

Use of magnetic field and electric current for manipulation

Potential for practical antiferromagnetic memory devices

Abstract

B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the N\'eel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demonstrate sequential write and read operations in antiferromagnetic memory resistors made of B2-orderd FeRh thin films by a magnetic field and electric current only. Our demonstration of writing and reading at ambient room temperature opens a realistic pathway towards operational antiferromagnetic memory devices.