Compensation for TID Damage in SOI Pixel Devices

TL;DR

This paper explores a novel method to mitigate total ionizing dose damage in SOI pixel devices for high-energy physics by introducing a second SOI layer and applying a negative voltage to counteract radiation effects.

Contribution

The study demonstrates the effectiveness of a second SOI layer and biasing strategy to compensate TID damage, validated through gamma-ray and X-ray irradiation experiments.

Findings

Effective TID compensation with second SOI layer

Consistent results between gamma-ray and X-ray irradiation

Operational up to 2 MGy dose range

Abstract

We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID (total ionizing dose) damage where holes trapped in oxide layers affect the operation of nearby transistors. We have introduced a second SOI layer - SOI2 beneath the BOX (Buried OXide) layer - in order to compensate for the TID effect by applying a negative voltage to this electrode to cancel the effect caused by accumulated positive holes. In this paper, the TID effects caused by Co gamma-ray irradiation are presented based on the transistor characteristics measurements. The irradiation was carried out in various biasing conditions to investigate hole accumulation dependence on the potential configurations. We also compare the data with samples irradiated with X-ray. Since we observed a fair agreement between the two irradiation datasets, the TID effects have been investigated in a wide dose range from 100~Gy to 2~MGy.