Carrier mobility modeling in highly inhomogeneous semiconductors

TL;DR

This paper investigates how large-scale defects in inhomogeneous semiconductors affect carrier mobility, using Monte Carlo simulations and experimental data to compare quantum and classical transport regimes.

Contribution

It introduces a theoretical analysis of large-scale defect effects on carrier scattering and compares quantum and classical transport in inhomogeneous semiconductors.

Findings

Large-scale defects screen themselves from charge carriers.

Monte Carlo simulations align with experimental measurements.

Quantum and classical transport regimes differ in defect interactions.

Abstract

The large scale various shapes and orientation defects influence into carrier scattering was theoretically analyzed using Monte Carlo method and compared to the experimental measurements. It was shown how the large scale defects screen themselves from the interaction with free charge carriers. The comparison of quantum and classical transport regimes was performed.