Characteristics of Non-Irradiated and Irradiated Double SOI Integration Type Sensor

TL;DR

This paper investigates the radiation hardness of a Double SOI monolithic pixel sensor, demonstrating its ability to recover from ionizing radiation damage and operate effectively in high-radiation environments for high-energy physics experiments.

Contribution

It introduces a Double SOI structure with a Middle Silicon layer that effectively compensates for TID damage, showing promising radiation tolerance.

Findings

Double SOI sensor recovers from 100 kGy irradiation with negative SOI2 voltage.

Sensor maintains response to IR laser post-irradiation.

Double SOI sensor suitable for harsh radiation environments in HEP experiments.

Abstract

We are developing monolithic pixel sensors based on a 0.2 $\mu$m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard radiation environments in HEP experiments. To compensate for TID damage, we have introduced a Double SOI structure which has a Middle Silicon layer (SOI2 layer) in addition. We studied the recovery from TID damage induced by $\mathrm{^{60}Co}~\gamma$'s and other characteristics of an Integration-type Double SOI sensor. The Double SOI sensor irradiated to 100 kGy showed a response for IR laser similar to of a non-irradiated sensor when we applied a negative voltage to the SOI2 layer. We conclude that the Double SOI sensor is radiation hard enough to be used in HEP experiments in harsh radiation environments such as at Bell II or ILC.