Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

TL;DR

This paper demonstrates a vertical field-effect transistor using a graphene/MoSe2 heterostructure, showing electric field control of the Schottky barrier and high ON-OFF current ratio, indicating promising electronic device potential.

Contribution

It introduces a graphene/MoSe2 heterostructure device where the Schottky barrier height can be modulated by an electric field, enabling high-performance transistor operation.

Findings

Schottky barrier with ideality factor ~1.3 at the interface

Large current ON-OFF ratio of 10^5 achieved

Fermi level in graphene can be strongly modulated by electric field

Abstract

We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10^5. These results point to the potential high performance of the graphene/MoSe2 vdW heterostructure for electronics applications.