Nonlocal study of the near field radiative heat transfer between two n-doped semiconductors

TL;DR

This study investigates near-field radiative heat transfer between n-doped semiconductors using a nonlocal dielectric model, revealing saturation effects at small separations that differ from local model predictions.

Contribution

It introduces a nonlocal dielectric model to analyze near-field heat transfer in doped semiconductors, showing saturation effects absent in local models.

Findings

Heat transfer saturates at small separations for high doping levels.

Nonlocal model removes the divergence predicted by local models.

Material parameters like doping concentration influence heat transfer behavior.

Abstract

We study in this work the near-field radiative heat transfer between two semi-infinite parallel planes of highly n-doped semiconductors. Using a nonlocal model of the dielectric permittivity, usually used for the case of metallic planes, we show that the radiative heat transfer coefficientsaturates as the separation distance is reduced for high doping concentration. These results replace the 1/d${}^2$ infinite divergence obtained in the local model case. Different features of the obtained results are shown to relate physically to the parameters of the materials, mainly the doping concentration and the plasmon frequency.