Intrinsic Quantum Anomalous Hall Effect in the Kagome Lattice Cs2LiMn3F12

TL;DR

This paper predicts the realization of the intrinsic quantum anomalous Hall effect in a kagome lattice material, Cs2Mn3F12, through ab initio calculations and a simplified tight-binding model, highlighting a 20 meV band gap.

Contribution

It introduces a novel material realization of the quantum anomalous Hall effect in a kagome lattice, supported by first-principles calculations and a theoretical model.

Findings

Intrinsic quantum anomalous Hall effect predicted in Cs2Mn3F12 kagome lattice.

Band gap of approximately 20 meV identified.

A simplified tight-binding model explains the topological bands.

Abstract

In a kagome lattice, the time reversal symmetry can be broken by a staggered magnetic flux emerging from ferromagnetic ordering and intrinsic spin-orbit coupling, leading to several wellseparated nontrivial Chern bands and intrinsic quantum anomalous Hall effect. Based on this idea and ab initio calculations, we propose the realization of the intrinsic quantum anomalous Hall effect in the single layer Cs2Mn3F12 kagome lattice and on the (001) surface of a Cs2LiMn3F12 single crystal by modifying the carrier coverage on it, where the band gap is around 20 meV. Moreover, a simplified tight binding model based on the in-plane dd\sigma antibonding states is constructed to understand the topological band structures of the system.