Effect of Photon-Assisted Andreev Reflection in the Accuracy of a SINIS Turnstile

TL;DR

This paper investigates how photon-assisted Andreev reflection in a SINIS turnstile affects its accuracy, revealing that electromagnetic environment interactions can limit single-electron tunneling precision.

Contribution

It demonstrates that photon exchange with the environment enhances Andreev reflection, impacting the accuracy of a SINIS turnstile for single-electron control.

Findings

Photon-assisted Andreev reflection increases due to electromagnetic environment.

Enhanced Andreev reflection limits tunneling accuracy.

Environmental interactions are crucial for device performance.

Abstract

We consider a hybrid single-electron transistor (SET) constituted by a gate-controlled normal-metal island (N) connected to two voltage-biased superconducting leads (S) by means of two tunnel junctions (S-I-N-I-S), operated as a turnstile. We show that the exchange of photons between this system and the high-temperature electromagnetic environment where it is embedded enhances Andreev reflection, thereby limiting the single-electron tunneling accuracy.