Compensation of radiation damages for SOI pixel detector via tunneling

TL;DR

This paper explores a method to mitigate radiation damage in SOI pixel detectors by using tunneling with high-voltage to inject electrons into oxide layers, aiming to improve detector performance in radiation environments.

Contribution

It introduces a novel approach of using high-voltage tunneling to compensate for TID effects in SOI pixel detectors, addressing a key challenge in radiation environments.

Findings

High-voltage tunneling reduces trapped holes in oxide layers.

The method shows potential for improving radiation tolerance of SOI detectors.

Progress in experimental validation of the tunneling compensation technique.

Abstract

We are developing monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environments, we have to solve effects of total ionizing dose (TID) for transistors which are enclosed in oxide layer.The holes which are generated and trapped in the oxide layers after irradiation affect characteristics of near-by transistors due to its positive electric field.Annealing and radiation of ultraviolet are not realistic to remove trapped holes for a fabricated detector due to thermal resistance of components and difficulty of handling. We studied compensation of TID effects by tunneling using a high-voltage. For decrease of trapped holes, applied high-voltage to buried p-well which is under oxide layer to inject the electrons into the oxide layer.In this report, recent progress of this study is shown.