SOIKID, SOI pixel detector combined with superconducting detector KID

TL;DR

This paper discusses the development of SOIKID, a novel detector that combines SOI pixel and superconducting KID technologies to improve X-ray photon energy resolution beyond traditional semiconductor detectors.

Contribution

It introduces the integration of SOI pixel detectors with KID technology for enhanced X-ray energy measurement capabilities.

Findings

Design concept of SOIKID combining SOI and KID detectors

Potential for extremely high energy resolution in X-ray detection

Initial development status and future prospects

Abstract

We present the development status of the SOIKID, a detector combining the SOI pixel detector and the superconducting detector KID (Kinetic Inductance Detector). The aim of the SOIKID is to measure X-ray photon energy with the resolution better than that of the semiconductor detector. The silicon substrate is used as the X-ray photon absorber. The recoiled electron creates athermal phonons as well as the ionizing electron-hole pairs. The KID formed at one side of the substrate surface detects the phonons to measure the total energy deposited, while the SOI pixel detector formed on the other side of the substrate detects the ionized carries to measure the position. Combining the position and energy measurements, it is in principle possible to have the extremely high energy resolution.