Evidence for defect-mediated tunneling in hexagonal boron nitride-based junctions

TL;DR

This study reveals that intrinsic defects in hexagonal boron nitride significantly influence tunneling behavior in metal-insulator-metal junctions, with defect states affecting electron transport and being modifiable by annealing.

Contribution

It provides experimental evidence for defect-mediated tunneling in hBN-based junctions and shows how defect states can be controlled through annealing.

Findings

Intrinsic defects affect tunneling characteristics.

Single electron charging events are observed.

Annealing modifies defect states and tunneling signatures.

Abstract

We investigate tunneling in metal-insulator-metal junctions employing few atomic layers of hexagonal boron nitride (hBN) as the insulating barrier. While the low-bias tunnel resistance increases nearly exponentially with barrier thickness, subtle features are seen in the current-voltage curves, indicating marked influence of the intrinsic defects present in the hBN insulator on the tunneling transport. In particular, single electron charging events are observed, which are more evident in thicker-barrier devices where direct tunneling is substantially low. Furthermore, we find that annealing the devices modifies the defect states and hence the tunneling signatures.