Exploring properties of the integrating pixels
Piotr Julian Kapusta, Yasuo Arai, Szymon Bugiel, Roma Dasgupta,, Sebastian Glab, Marek Idzik, Wojciech Kucewicz, Toshinobu Miyoshi, Michal, Turala

TL;DR
This paper investigates the characteristics of integrating pixels in SOI sensors, focusing on noise filtering, sampling effects, and leakage current measurements to understand their performance and properties.
Contribution
It provides new insights into the filtering properties and leakage currents of integration-type pixels in SOI sensors, based on experimental tests and analysis.
Findings
Correlated Double Sampling effectively reduces noise in integration pixels.
Leakage current measurements vary between different pixel detector chips.
Sampling intervals significantly impact noise filtering performance.
Abstract
This paper presents some observations and ideas collected during the tests of the SOI sensors, based on the integration type pixels. First, it contains a rough analysis of the Correlated Double Sampling filtering properties with respect to different noise sources and long sampling intervals, which are typical for the pixels under consideration. Second, results of the pixel leakage current measurements in the pix_2012 and DIPIX pixel detector chips are presented.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsCCD and CMOS Imaging Sensors · Particle Detector Development and Performance · Image Processing Techniques and Applications
