Low Operation Voltage Ferroelectric Field-Effect Transistor Based on Polarization Rotation Effect

TL;DR

This paper presents a theoretical model showing that ferroelectric MOSFETs can operate at low voltages through polarization reorientation, enhancing device performance and energy efficiency.

Contribution

The study introduces an analytical model incorporating polarization rotation effects to design low-voltage ferroelectric MOSFETs with improved stability and performance.

Findings

Polarization reorientation can lower the subthreshold swing below 60 mV/decade.

Proper ferroelectric oxide thickness enables low-voltage operation.

The model guides the design of energy-efficient electronic devices.

Abstract

The effect of polarization rotation on the performance of metal oxide semiconductor field-effect transistors was investigated with a Landau-Ginzburg-Devonshire theory based model. In this analytical model, depolarization field, polarization rotations and the electrostatic properties of the doped silicon substrate are considered to illustrate the size effect of ferroelectric oxides and the stability of polarization in each direction. Based on this model, we demonstrate that MOSFET operation could be achieved by polarization reorientation with a low operating voltage, if the thickness of ferroelectric oxide is properly selected. Polarization reorientation can boost the surface potential of the silicon substrate, leading to a subthreshold swing S lower than 60 mV/decade. We believe that this model could provide guidance in designing electronic logic devices with low operating voltages and low active energy consumption.