Power dissipation and electrical breakdown in black phosphorus

TL;DR

This study investigates the thermal behavior and electrical breakdown of multi-layer black phosphorus, providing insights into its operating limits and failure mechanisms for electronic applications.

Contribution

It combines micro-Raman spectroscopy and microscopy techniques to quantify temperature rise and analyze fracture mechanisms in black phosphorus under electrical stress.

Findings

Linear temperature increase up to 600K at 0.896K/μm^3/mW

Identified threshold power and temperature for electrical breakdown

Analyzed fracture mechanisms via electron and atomic force microscopy

Abstract

We report operating temperatures and heating coefficients measured in a multi-layer black phosphorus device as a function of injected electrical power. By combining micro-Raman spectroscopy and electrical transport measurements, we have observed a linear temperature increase up to 600K at a power dissipation rate of 0.896K\mu m^3/mW. By further increasing the bias voltage, we determined the threshold power and temperature for electrical breakdown and analyzed the fracture in the black phosphorus layer that caused the device failure by means of scanning electron microscopy and atomic force microscopy. The results will benefit the research and development of electronics and optoelectronics based on novel two-dimensional materials.