The Origin of Ferroelectricity in Hf$_{x}$ Zr$_{1-x}$ O$_2$: A Computational Investigation and a Surface Energy Model
Robin Materlik, Christopher K\"unneth, Alfred Kersch

TL;DR
This study uses computational methods to analyze the stability and origins of ferroelectric phases in HfO$_2$, ZrO$_2$, and Hf$_{0.5}$Zr$_{0.5}$O$_2$, proposing a surface energy model to explain ferroelectricity at nanoscale.
Contribution
It introduces a surface energy model that predicts ferroelectric phase stability in nanoscale HfO$_2$-ZrO$_2$ films, supported by density functional calculations and phase energy analysis.
Findings
Ferroelectric phase is energetically unfavorable in bulk but stabilized at nanoscale.
Surface energy contributions favor ferroelectric phases in small grains below 5 nm.
Electric field of 1 MV/cm can induce phase transformation in ZrO$_2$.
Abstract
The structural, thermal, and dielectric properties of the ferroelectric phase of HfO, ZrO and Hf Zr O (HZO) are investigated with carefully validated density functional computations. We find, that the free bulk energy of the ferroelectric orthorhombic Pca2 phase is unfavorable compared to the monoclinic P2/c and the orthorhombic Pbca phase for all investigated stoichiometries in the HfZrO system. To explain the existence of the ferroelectric phase in nanoscale thin films we explore the Gibbs / Helmholtz free energies as a function of stress and film strain and find them unlikely to become minimal in HZO films for technological relevant conditions. To assess the contribution of surface energy to the phase stability we parameterize a model, interpolating between existing data, and find the Helmholtz free energy of…
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