Effect of Misfit Strain in (Ga,Mn)(Bi,As) Epitaxial Layers on their Magnetic and Magneto-Transport Properties

TL;DR

This study investigates how misfit strain affects the magnetic and magneto-transport properties of (Ga,Mn)(Bi,As) epitaxial layers, revealing strain-dependent magnetic behavior and improvements through annealing.

Contribution

It provides new insights into the influence of misfit strain on magnetic and transport properties of (Ga,Mn)(Bi,As) layers, including structural characterization and effects of annealing.

Findings

Layers are fully strained to substrates under different strain conditions.

Post-growth annealing enhances hole concentration and Curie temperature.

Magnetic properties depend on the type of misfit strain.

Abstract

Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or tensile strain, respectively. Ferromagnetic Curie temperature and magnetocrystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and Curie temperature in the layers.