Ultrafast Carrier Dynamics in the Large Magnetoresistance Material WTe$_{2}$
Y. M. Dai, J. Bowlan, H. Li, H. Miao, S. F. Wu, W. D., Kong, Y. G. Shi, S. A. Trugman, J.-X. Zhu, H. Ding, A. J., Taylor, D. A. Yarotski, R. P. Prasankumar

TL;DR
This study uses ultrafast optical spectroscopy to investigate carrier relaxation processes in WTe₂, revealing electron-phonon interactions and temperature-dependent recombination dynamics linked to its large magnetoresistance.
Contribution
It provides the first detailed characterization of ultrafast carrier dynamics and electron-phonon coupling in WTe₂, connecting these processes to its magnetoresistive properties.
Findings
Fast sub-picosecond electron-phonon thermalization process identified.
Slower 5-15 ps phonon-assisted electron-hole recombination observed.
Recombination time decreases below 50 K, indicating electronic structure changes.
Abstract
Ultrafast optical pump-probe spectroscopy is used to track carrier dynamics in the large magnetoresistance material WTe. Our experiments reveal a fast relaxation process occurring on a sub-picosecond time scale that is caused by electron-phonon thermalization, allowing us to extract the electron-phonon coupling constant. An additional slower relaxation process, occurring on a time scale of 5-15 picoseconds, is attributed to phonon-assisted electron-hole recombination. As the temperature decreases from 300 K, the timescale governing this process increases due to the reduction of the phonon population. However, below 50 K, an unusual decrease of the recombination time sets in, most likely due to a change in the electronic structure that has been linked to the large magnetoresistance observed in this material.
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