Ultra-low-energy straintronics using multiferroic composites
Kuntal Roy

TL;DR
This paper reviews the development of ultra-low-energy straintronic devices using multiferroic composites, highlighting their potential to replace traditional electronics by enabling energy-efficient, non-volatile memory and logic operations at room temperature.
Contribution
It provides a comprehensive review of the switching dynamics, energy dissipation, and performance metrics of multiferroic straintronic devices, emphasizing their suitability for future low-power computing.
Findings
Voltage-induced magnetization switching dissipates ~1 attojoule of energy.
Switching delay is less than one nanosecond at room temperature.
Devices are promising for non-volatile memory and logic applications.
Abstract
This paper reviews the recent developments on building nanoelectronics for our future information processing paradigm using multiferroic composites. With appropriate choice of materials, when a tiny voltage of few tens of millivolts is applied across a multiferroic composite, i.e. a piezoelectric layer stain-coupled with a magnetostrictive layer, the piezoelectric layer gets strained and the generated stress in the magnetostrictive layer switches the magnetization direction between its two stable states. We particularly review the switching dynamics of magnetization and calculation of associated metrics like switching delay and energy dissipation. Such voltage-induced magnetization switching mechanism dissipates a minuscule amount of energy of only ~1 attojoule in sub-nanosecond switching delay at room-temperature. The performance metrics for such non-volatile straintronic devices make…
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