Electrical and Thermal Transport of Layered Bismuth-chalcogenide EuBiS2F at temperatures between 300 and 623 K

TL;DR

This study investigates the electrical and thermal transport properties of EuBiS2F, a layered bismuth-chalcogenide, across a temperature range of 300 to 623 K, revealing similarities to F-doped LaBiS2O and lower thermal conductivity than SrBiS2F.

Contribution

It provides new insights into the transport properties of EuBiS2F and compares its thermal conductivity with related compounds at elevated temperatures.

Findings

Carrier transport similar to F-doped LaBiS2O above 300 K

Lower lattice thermal conductivity than SrBiS2F due to heavier Eu atoms

Significant Eu 4f and Bi 6p electron hybridization observed

Abstract

We demonstrate the electrical and thermal transport of layered bismuth-based sulfide EuBiS2F from 300 to 623 K. Although significant hybridization between Eu 4f and Bi 6p electrons was reported previously, the carrier transport of the compound is similar to those of F-doped LaBiS2O, at least above 300 K. The lattice thermal conductivity is lower than that of isostructural SrBiS2F, which is attributed to heavier atomic mass of Eu ions.