A combined NMR and DFT study of Narrow Gap Semiconductors: The case of PbTe
Robert E. Taylor, Fahri Alkan, Dimitrios Koumoulis, Michael P. Lake,, Daniel King, Cecil Dybowski, Louis-S. Bouchard

TL;DR
This paper combines experimental NMR and ab initio calculations to distinguish chemical and Knight shifts in PbTe semiconductors, providing a more efficient method for analyzing carrier effects and exploring nanocrystal properties.
Contribution
It introduces an alternative approach using NMR and DFT calculations to separate chemical and Knight shifts in PbTe, reducing the need for multiple sample studies.
Findings
Good agreement with literature on chemical shifts at zero carrier concentration
Evidence supporting the 'self-cleaning effect' in PbTe nanocrystals
Comparison of NMR shifts with literature Knight shift data
Abstract
In this study we present an alternative approach to separating contributions to the NMR shift originating from the Knight shift and chemical shielding by a combination of experimental solid-state NMR results and ab initio calculations. The chemical and Knight shifts are normally distinguished through detailed studies of the resonance frequency as function of temperature and carrier concentration, followed by extrapolation of the shift to zero carrier concentration. This approach is time-consuming and requires studies of multiple samples. Here, we analyzed Pb and Te NMR spin-lattice relaxation rates and NMR shifts for bulk and nanoscale PbTe. The shifts are compared with calculations of the Pb and Te chemical shift resonances to determine the chemical shift at zero charge carrier concentration. The results are in good agreement with literature values from…
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