Structure of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001)
Bernd Jenichen, Uwe Jahn, Andrei Nikulin, Jens Herfort and, Holm Kirmse
TL;DR
This study investigates the epitaxial growth and structural properties of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001), revealing orientation behaviors and the influence of substrate temperature on film crystallinity.
Contribution
It provides detailed analysis of the growth orientations and interface effects in Fe3Si/Al/Fe3Si stacks on GaAs(001), highlighting the impact of substrate temperature on final film properties.
Findings
First Fe3Si film grows epitaxially as (001) on GaAs(001)
Al film grows with a 111 fiber texture influenced by the Fe3Si/Al interface
Final film properties depend on substrate temperature during last layer deposition
Abstract
Fe3Si/Al/Fe3Si/GaAs(001) structures were deposited by molecular-beam epitaxy and characterized by transmission and scanning electron microscopy, and x-ray diffraction. The first Fe3Si film on GaAs(001) is growing epitaxially as (001) oriented single crystal. The subsequent Al film grows almost 111 oriented in a fibre texture although the underlying Fe3Si is exactly (001) oriented. The growth in this orientation is triggered by a thin transition region which is formed at the Fe3Si/Al interface. In the end after the growth of the second Fe3Si layer on top of the Al the final properties of the whole stack depend on the substrate temperature T_S during deposition of the last film. The upper Fe3Si films are mainly 110 oriented although they are poly-crystalline. At lower T_S, around room temperature, all the films retain their original structural properties.
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