Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

TL;DR

This paper evaluates graphene-hBN-graphene resonant tunneling diodes as potential high-frequency oscillators, demonstrating through simulations that they can achieve oscillations up to several hundred GHz depending on various device and circuit parameters.

Contribution

The study provides a comprehensive simulation-based analysis of the high-frequency performance of graphene-hBN-graphene resonant tunneling diodes, highlighting their potential as GHz oscillators.

Findings

Oscillation frequencies up to several hundred GHz are achievable.

Device parameters like doping and geometry significantly influence performance.

Circuit impedance affects the oscillation characteristics.

Abstract

We assess the potential of two-terminal graphene-hBN-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.