Electrical control of near-field energy transfer between quantum dots and 2D semiconductors

TL;DR

This study demonstrates electrical control over energy transfer between quantum dots and 2D semiconductors, enabling tunable photoluminescence for potential optoelectronic applications.

Contribution

It introduces a device architecture that allows modulation of FRET rates and QD emission via electrical gating in QD/2D semiconductor hybrids.

Findings

FRET efficiency can be modulated by ~500% with gate voltage.

QD photoluminescence intensity can be electrically tuned by up to ~75%.

Devices operate with small voltage changes and enable selective emission tuning.

Abstract

We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogenous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient non-radiative F\"orster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 lead to large (~500%) changes in the FRET rate. This, in turn, allows for up to ~75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.