Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the framework of self-assembled deformation-diffusion model

TL;DR

This paper develops a self-assembled deformation-diffusion model to analyze how point defects distribute over space and time in a three-layer stressed nanoheterosystem, revealing vacancy concentration behavior in the stationary state.

Contribution

It introduces a novel self-assembled deformation-diffusion model for point defect distribution in stressed nanoheterostructures, accounting for deformation interactions.

Findings

Vacancy concentration decreases by 16% in the inhomogeneously compressed layer at steady state.

The model predicts specific spatial-temporal defect profiles in stressed nanoheterosystems.

Stationary state occurs after a characteristic relaxation time.

Abstract

The model of spatial-temporal distribution of point defects in a three-layer stressed nanoheterosystem GaAs/In$_x$Ga$_{1 - x}$As/GaAs considering the self-assembled deformation-diffusion interaction is constructed. Within the framework of this model, the profile of spatial-temporal distribution of vacancies (interstitial atoms) in the stressed nanoheterosystem GaAs/In$_x$Ga$_{1 - x}$As/GaAs is calculated. It is shown that in the case of a stationary state ($t > 5\tau _d^{(2)}$), the concentration of vacancies in the inhomogeneously compressed interlayer is smaller relative to the initial average value $N_{d0}^{(2)}$ by 16%