Current-limiting challenges for all-spin logic devices
Li Su, Youguang Zhang, Jacques-Olivier Klein, Yue Zhang, Arnaud, Bournel, Albert Fert, Weisheng Zhao

TL;DR
This paper analyzes the current-limiting factors in all-spin logic devices, develops a physics-based model to optimize device structure and materials, and compares different configurations to enhance performance and reliability.
Contribution
It introduces a comprehensive physics-based model for ASLD, considering nano-magnet switching, spin transport, and breakdown, to guide device optimization and material selection.
Findings
Asymmetric structures optimize current limitations.
Copper channels outperform graphene in energy efficiency.
Breakdown current density limits device performance.
Abstract
All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memory structure. Here we investigate the key current-limiting factors and develop a physics-based model of ASLD through nano-magnet switching, the spin transport properties and the breakdown characteristic of channel. First, ASLD with perpendicular magnetic anisotropy (PMA) nano-magnet is proposed to reduce the critical current (Ic0). Most important, the spin transport efficiency can be enhanced by analyzing the device structure, dimension, contact resistance as well as material parameters. Furthermore, breakdown current density (JBR) of spin channel is studied for the upper current limitation. As a result, we can deduce current-limiting conditions and estimate energy dissipation. Based on the model, we…
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Taxonomy
TopicsQuantum and electron transport phenomena · Magnetic properties of thin films · Advancements in Semiconductor Devices and Circuit Design
