Resonant high harmonic generation in a ballistic graphene transistor with an AC driven gate

TL;DR

This paper presents a theoretical analysis of high harmonic generation in a ballistic graphene transistor driven by an AC gate, showing how resonances enhance higher harmonics and could enable high-frequency device applications.

Contribution

The study develops a Floquet theory-based model for Dirac electrons in a graphene transistor with a driven potential barrier, revealing resonance effects on harmonic generation.

Findings

Resonant conditions excite quasibound states leading to higher harmonic generation.

Fano and Breit-Wigner resonance line shapes are observed in transmission.

Potential application in high-frequency frequency multipliers.

Abstract

We report a theoretical study of time-dependent transport in a ballistic graphene field effect transistor. We develop a model based on Floquet theory describing Dirac electron transmission through a harmonically driven potential barrier. Photon-assisted tunneling results in excitation of quasibound states at the barrier. Under resonance condition, the excitation of the quasibound states leads to promotion of higher-order sidebands and enhanced higher harmonics of the source-drain conductance. The resonances in the main transmission channel are of the Fano form, while they are of the Breit-Wigner form for sidebands. We discuss the possibility of utilizing the resonances in prospective ballistic high-frequency devices, in particular frequency multipliers.