Interstitial diffusion of arsenic in silicon

TL;DR

This paper models the interstitial diffusion of arsenic in silicon during ion implantation, showing that nonequilibrium interstitial migration significantly influences arsenic redistribution and matches experimental profiles at high temperatures.

Contribution

It introduces a simulation approach for arsenic diffusion considering nonequilibrium interstitial migration, aligning well with experimental data and providing key diffusion parameters.

Findings

Excellent agreement between simulated and experimental arsenic profiles

Migration of nonequilibrium arsenic interstitials is significant

Parameters for arsenic diffusion at high temperatures were obtained

Abstract

The mechanism underlying the long-range interstitial migration of nonequilibrium impurity interstitial species is used to simulate arsenic redistribution in ion implantation. An excellent agreement of the calculated arsenic concentration profiles with experimental data allows one to assume that the migration of nonequilibrium arsenic interstitial atoms makes a significant contribution to the formation of a low concentration region on thermal arsenic diffusion. The arsenic concentration profile calculated for a temperature of 1050 Celsius degrees within the framework of this assumption agrees well with the experimental one. A number of parameters describing arsenic diffusion at 1050 and 1108 Celsius degrees have been obtained.