Surface electronic structure and isotropic superconducting gap in (Li$_{0.8}$Fe$_{0.2}$)OHFeSe
X. H. Niu, R. Peng, H. C. Xu, Y. J. Yan, J. Jiang, D. F. Xu, T. L. Yu,, Q. Song, Z. C. Huang, Y. X. Wang, B. P. Xie, X. F. Lu, N. Z. Wang, X. H., Chen, Z. Sun, and D. L. Feng

TL;DR
This study uses ARPES to analyze the surface electronic structure and isotropic superconducting gap of (Li$_{0.8}$Fe$_{0.2}$)OHFeSe, revealing electron doping, similarities to Rb$_x$Fe$_{2-y}$Se$_2$, and insights into its high $T_c$.
Contribution
First ARPES investigation of (Li$_{0.8}$Fe$_{0.2}$)OHFeSe revealing its surface electronic structure and superconducting gap characteristics.
Findings
Surface FeSe layers are electron-doped by (Li$_{0.8}$Fe$_{0.2}$)OH layers.
Superconducting gap is isotropic around the electron Fermi surface.
Higher $T_c$ compared to similar compounds may be due to layer homogeneity or other effects.
Abstract
Using angle-resolved photoemission spectroscopy (ARPES), we revealed the surface electronic structure and superconducting gap of (LiFe)OHFeSe, an intercalated FeSe-derived superconductor without antiferromagnetic phase or Fe-vacancy order in the FeSe layers, and with a superconducting transition temperature () 40 K. We found that (LiFe)OH layers dope electrons into FeSe layers. The electronic structure of surface FeSe layers in (LiFe)OHFeSe resembles that of RbFeSe except that it only contains half of the carriers due to the polar surface, suggesting similar quasiparticle dynamics between bulk (LiFe)OHFeSe and RbFeSe. Superconducting gap is clearly observed below , with an isotropic distribution around the electron Fermi surface. Compared with FeSe…
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