Silicon-nitride photonic circuits interfaced with monolayer MoS$_2$

TL;DR

This paper demonstrates the integration of monolayer MoS$_2$ with silicon nitride microresonators, enabling efficient evanescent coupling and highlighting potential for hybrid optoelectronic devices across various spectral ranges.

Contribution

It introduces a novel method for integrating monolayer MoS$_2$ with silicon nitride photonic circuits using visco-elastic transfer, enabling new hybrid device applications.

Findings

Monolayer MoS$_2$ exhibits high absorption of 850 dB/cm in this geometry.

Evanescent coupling between the resonator mode and monolayer MoS$_2$ is experimentally confirmed.

The technique is adaptable for various monolayer semiconductors in optoelectronic devices.

Abstract

We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.