Magnetoresistance of doped silicon

TL;DR

This study investigates the magnetoresistance behavior of heavily doped silicon near the metal-insulator transition, comparing experimental results with theoretical predictions to understand electron conduction mechanisms.

Contribution

It provides the first detailed comparison between experimental magnetoresistance data and a many-body theoretical model for heavily doped silicon.

Findings

Qualitative agreement between theory and experiment

Magnetoresistance increases with donor concentration

Supports the many-valley conduction band model

Abstract

We have performed longitudinal magnetoresistance measurements on heavily n-doped silicon for donor concentrations exceeding the critical value for the metal-non-metal transition. The results are compared to those from a many-body theory where the donor-electrons are assumed to reside at the bottom of the many-valley conduction band of the host. Good qualitative agreement between theory and experiment is obtained.