High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films

TL;DR

This paper reports the synthesis of InMnAs films with high Curie temperatures and strong perpendicular magnetic anisotropy, achieved through ion implantation and pulsed laser melting, advancing potential spintronic applications.

Contribution

It demonstrates the controlled growth of InMnAs films with tunable magnetic properties, including high Curie temperature and perpendicular anisotropy, via ion implantation and laser melting techniques.

Findings

Curie temperature reaches 82 K at x=0.105 Mn concentration

Mn substitution induces strain leading to magnetic anisotropy

Perpendicular magnetic anisotropy suitable for spintronics

Abstract

We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.