Towards Faster InP Photonic Crystal All-Optical-Gates
Gregory Moille, Sylvain Combri\'e, Kerstin Fuchs, Matusala Yacob,, Johann Peter Reithmaier, Alfredo de Rossi
TL;DR
This paper demonstrates a two-fold acceleration in the recovery time of a P-doped InP photonic crystal all-optical gate, advancing the speed of nanophotonic optical switching.
Contribution
It introduces a method to significantly speed up the recovery time of InP photonic crystal optical gates through carrier dynamics analysis.
Findings
Two-fold acceleration of the recovery time constant.
Transition from ambipolar to minority carrier diffusion regime.
Potential for faster nanophotonic all-optical gates.
Abstract
We demonstrated a two-fold acceleration of the fast time constant characterising the recovery of a P-doped Indium-Phosphide Photonic Crystal all-optical gate. Time-resolved spectral analysis is compared with a three-dimensional drift-diffusion model for the carrier dynamics, demonstrating the transition from the ambipolar to the faster minority carrier dominated diffusion regime. This open the perspective for faster yet efficient nanophotonic all-optical gates.
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