Calculation method of spin accumulations and spin signals in nanostructures using spin resistors

TL;DR

This paper introduces an analytical calculation method for spin accumulations, currents, and magnetoresistances in complex nanostructures, aiding the design of spintronics devices across various materials.

Contribution

It presents a simple, analytical approach to compute spin transport properties in complex multilayer and multiterminal nanostructures, applicable to diverse materials.

Findings

Enables analytical calculation of spin signals in complex nanostructures.

Applicable to multilayers, semiconductors, oxides, metals, and carbon materials.

Facilitates design and analysis of spintronics devices.

Abstract

The understanding and calculation of spin transport are essential elements for the development of spintronics devices. Here, we propose a simple method to calculate analytically the spin accumulations, spin currents and magnetoresistances in complex systems. This can be used both for CPP experiments in multilayers and for multiterminal nanostructures made of semiconductors, oxides, metals and carbon allotropes.