General Geometric Fluctuation Modeling for Device Variability Analysis

TL;DR

This paper introduces a novel geometric fluctuation model based on the impedance field method for efficient and accurate device variability analysis, offering improved insights and broader applicability over existing models.

Contribution

The paper presents a new GV model using IFM that enhances efficiency and accuracy in device variability analysis compared to traditional and existing RGF models.

Findings

GV model offers better efficiency than direct variational device modeling.

GV model provides improved accuracy over interface-limited RGF models.

The approach yields detailed insights into device noise sources and sensitivities.

Abstract

The authors propose a new modeling approach based on the impedance field method (IFM) to analyze the general geometric variations in device simulations. Compared with the direct modeling of multiple variational devices, the proposed geometric variation (GV) model shows a better efficiency thanks to its IFM based nature. Compared with the existing random geometric fluctuation (RGF) model where the noise sources are limited to the interfaces, the present GV model provides better accuracy and wider application areas as it transforms the geometric variation into global mesh deformation and computes the noise sources induced by the geometric variation in the whole simulation domain. GV model also provides great insights into the device by providing the effective noise sources, equation-wise contributions, and sensitivity maps that are useful for device characterization and optimization.