A comparing study on optoelectronic properties of phototransistors based on MEH-PPV and PbS QD hybrids with bulk- and layer-heterojunction

TL;DR

This study compares the optoelectronic properties of MEH-PPV and PbS QD hybrid phototransistors with bulk- and layer-heterojunctions to determine which structure enhances photo detection performance.

Contribution

It provides a comparative analysis of bulk- and layer-heterojunction structures in hybrid phototransistors based on MEH-PPV and PbS QDs, highlighting their impact on optoelectronic properties.

Findings

Layer-heterojunctions show higher responsivity than bulk-heterojunctions.

Hybrid materials exhibit distinct carrier mobilities affecting photo detection.

The study identifies optimal heterojunction configurations for improved phototransistor performance.

Abstract

As the responsivity (R) of a thin film photo detector is proportional to the product of the photo-induced carrier density (n) and mobility (u) (Z. Sun, Z. Liu, J. Li, G.-a. Tai, S. Lau and F. Yan, Adv. Mater., 24, 5878, 2012), which of the types is conducive to photo detection, choosing between layer-heterojunction (LH) and bulk-heterojunction (BH) field effect phototransistors (FEpTs), is still unknown. A comparison study is performed based on an MEH-PPV and PbS QDs hybrid.