Testbeam studies of pre-prototype silicon strip sensors for the LHCb UT upgrade project

TL;DR

This paper reports on test beam evaluations of pre-prototype silicon strip sensors for the LHCb upgrade, focusing on their performance after high radiation exposure to ensure durability in the upgraded detector environment.

Contribution

It presents new test beam results of irradiated silicon strip sensors, assessing their suitability for the LHCb Upstream Tracker upgrade.

Findings

Sensors maintain performance after high radiation doses

Irradiated sensors meet operational requirements

Data supports deployment in high-radiation environments

Abstract

The LHCb experiment is preparing for a major upgrade in 2018-2019. One of the key components in the upgrade is a new silicon tracker situated upstream of the analysis magnet of the experiment. The Upstream Tracker (UT) will consist of four planes of silicon strip detectors, with each plane covering an area of about 2 m$^2$. An important consideration of these detectors is their performance after they have been exposed to a large radiation dose. In this article we present test beam results of pre-prototype n-in-p and p-in-n sensors that have been irradiated with fluences up to $4.0\times10^{14}$ $n_{\rm eq}$ cm$^{-2}$.