A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations

TL;DR

This paper introduces a compact analytic model for high-performance TFETs that accurately predicts I-V characteristics by capturing key physical phenomena, validated against advanced NEGF simulations, enabling efficient device analysis.

Contribution

The paper presents a novel compact model for TFETs that incorporates potential profiles and band curvature, validated against NEGF simulations, and accounts for doping effects in ultra-scaled devices.

Findings

Model accurately reproduces NEGF simulation data across all operation regions.

Incorporates doping effects, impacting device performance predictions.

Provides a computationally efficient tool for device physics exploration.

Abstract

A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap semiconductors. The model is based on an analytic description of two key features, which capture the main physical phenomena related to TFETs: 1) the potential profile from source to channel, and 2) the elliptic curvature of the complex bands in the bandgap region. It is proposed to use 1D Poisson's equations in the source and the channel to describe the potential profile in homojunction TFETs. This allows to quantify the impact of source/drain doping on device performance, an aspect usually ignored in TFET modeling but highly relevant in ultra-scaled devices. The compact model is validated by comparison with state-of-the-art quantum transport simulations using a 3D full band atomistic approach based on Non-Equilibrium Green's Functions (NEGF). It is shown that the model reproduces with good accuracy the data obtained from the simulations in all regions of operation: the on/off states and the n/p branches of conduction. This approach allows calculation of energy-dependent band-toband tunneling currents in TFETs, a feature that allows gaining deep insights into the underlying device physics. The simplicity and accuracy of the approach provides a powerful tool to explore in a quantitatively manner how a wide variety of parameters (material-, size- and/or geometrydependent) impact the TFET performance under any bias conditions. The proposed model presents thus a practical complement to computationally expensive simulations such as the 3D NEGF approach.