Few Layer HfS2 FET

TL;DR

This paper introduces the first few-layer HfS2 FET, demonstrating its potential as a 2D material with a good balance of mobility and bandgap, showing promising device performance.

Contribution

It is the first demonstration of a few-layer HfS2 FET, highlighting its advantages for low-power, high-performance 2D electronic devices.

Findings

Robust current saturation in HfS2 FETs

High on/off ratio exceeding 10^4

Potential for low-resistance contacts

Abstract

2D materials are expected to be favorable channel materials for field-effect transistor (FET) with extremely short channel length because of their superior immunity to short-channel effects (SCE). Graphene, which is the most famous 2D material, has no bandgap without additional techniques and this property is major hindrance in reducing the drain leakage. Therefore, 2D materials with finite band gap, such as transition metal dichalcogenides (TMDs, e.g. MoS2 WSe2) or phosphorene, are required for the low power consumption FETs. Hafnium disulfide (HfS2) is a novel TMD, which has not been investigated as channel material. We focused on its potential for well-balanced mobility and bandgap properties. The higher electron affinity of Hf dichalcogenides compared with Mo or W chalcogenides facilitates the formation of low resistance contact and staggered heterojunction with other 2D materials. Here we demonstrate the first few layer HfS2 FET with robust current saturation and high current on/off ratio of more than 10^4.