Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
Antonio Di Bartolomeo

TL;DR
This paper reviews the recent experimental research on graphene/semiconductor Schottky diodes, highlighting their tunable barrier properties and potential applications in electronics and sensing technologies.
Contribution
It provides a comprehensive overview of the physics, modeling, and promising applications of graphene/semiconductor junctions, a relatively new area of systematic investigation.
Findings
Graphene/semiconductor junctions exhibit rectifying behavior.
Tunable Schottky barrier height enhances device versatility.
Potential applications include photodetectors, solar cells, and sensors.
Abstract
In the past decade graphene has been one of the most studied material for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility of integration with the exiting semiconductor technology for next-generation electronic and sensing devices. In this context, the understanding of the graphene/semiconductor interface is of great importance since it can constitute a versatile standalone device as well as the building-block of more advanced electronic systems. Since graphene was brought to the attention of the scientific community in 2004, the device research has been focused on the more complex graphene transistors, while the graphene/semiconductor junction, despite its importance, has started to be the subject of systematic investigation only recently. As a result, a thorough…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
