Non-Dirac topological surface states in (SnTe)$_{n\geq2}$(Bi$_2$Te$_3$)$_{m=1}$
S. V. Eremeev, T. V. Menshchikova, I. V. Silkin, M. G. Vergniory, P., M. Echenique, E. V. Chulkov

TL;DR
This paper reports the discovery of a new type of topological surface states in layered (SnTe)$_{n=2,3}$(Bi$_2$Te$_3$)$_{m=1}$ compounds, characterized by non-Dirac dispersion and tunable carrier velocity.
Contribution
It introduces a novel topological surface state with non-Dirac dispersion in layered compounds combining SnTe and Bi$_2$Te$_3$, expanding the understanding of topological materials.
Findings
Discovered non-Dirac topological surface states in layered compounds.
Surface state dispersion has two linear sections with different slopes.
External electric field can switch the velocity of topological carriers.
Abstract
A new type of topological spin-helical surface states was discovered in layered van der Waals bonded (SnTe)(BiTe) compounds which comprise two covalently bonded band inverted subsystems, SnTe and BiTe, within a building block. This novel topological states demonstrate non-Dirac dispersion within the band gap. The dispersion of the surface state has two linear sections of different slope with shoulder feature between them. Such a dispersion of the topological surface state enables effective switch of the velocity of topological carriers by means of applying an external electric field.
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