The Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures
Yongqing Cai, Gang Zhang, and Yong-Wei Zhang

TL;DR
This study uses density functional theory to analyze the structural and electronic properties of phosphorene heterostructures with graphene and hexagonal boron nitride, revealing their potential for electronic and optoelectronic device applications.
Contribution
It provides a detailed theoretical investigation of the interlayer interactions and electronic characteristics of phosphorene-based heterostructures with graphene and BN.
Findings
Interlayer distance, binding energy, and charge transfer are similar in G/BP and BN/BP.
Weak noncovalent interlayer bonding due to orbital interactions.
Phosphorene remains a direct band gap material with preserved optical properties.
Abstract
Vertical integration of two-dimensional materials has recently emerged as an exciting method for the design of novel electronic and optoelectronic devices. Using density functional theory, we investigatethe structural and electronic properties of two heterostruc-tures, graphene/phosphorene (G/BP) and hexagonal boron nitride/phosphorene (BN/BP). We found that the interlayer distance, binding energy, and charge transfer in G/BP and BN/BP are similar. Interlayer noncovalentbonding is predicted due to the weak coupling between the pz orbital of BP and the {\pi} orbital of graphene and BN. A small amount of electron transfer from graphene and BN, scaling with the vertical strain, renders BP slightly n-doped for both heterostructures. Several attractive characteristics of BP, including direct band gap and linear dichroism, are preserved. However, a large redistribution of electrostatic…
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